Vitor Baranauskas, Helder J. Ceragioli, Alfredo C. Peterlevitz, Marcelo C.Tosin, Steven F.Durrant
摘 要
We studied the effects on the growth kinetics and properties of diamond and carbon-like diamond films obtained by the
introduction of argon at low to high concentrations0]85 vol.% Ar.into the feed mixture ethanol and hydrogen. of a
hot-filament chemical vapor depositionCVD.reactor. Scanning electron microscopySEM.analysis revealed that the addition
of argon induces an increase in the diamond grain size, and increases the flaws between the grains and the density of vacancy
defects. Well-faceted diamond films of good qualitymeasured by Raman spectroscopy.have been obtained using up to 65 vol.%
of argon in the gaseous mixture, while higher concentrations85 vol.% Ar.produce diamond-like carbon or other complex
carbon structures. We also observed an increase in the diamond growth rate with argon addition that was associated with an
increase in carbon free radicalsup to ;40 vol.% Ar.or to the increase in the filament temperature necessary to keep the
substrate temperature constant at higher Ar concentrationsabove ;40 vol.% Ar.. Room temperature photoluminescence
spectroscopy also confirmed that argon addition increases the density of vacancy defects in the diamond structure.