Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates
作 者 详细资料
相关链接
DOI URL
附 件Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular
Nanobubbles Do Not Sit Alone at the Solid-Liquid InterfaceTheoretical study of the initial stage of InN growth on cubic zirconia (111) substratesElectronic Size Effects in Three-Dimensional NanostructuresCondensation pressures in small pores: An analytical model based on density functional theoryHeterogeneous crystallization near structured walls in quenched two-dimensional binary colloidal suspensions
浙公网安备 33010202000686号 ( 浙ICP备09035230号-1 )
