Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals
yfr 添加于 2011-6-30 15:05
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作 者
HORAK J 摘 要
The free carrier concentration of the Sb 2−x In x Te 3 , Bi 2−x In x Te 3 and Bi 2 Te 3−x S x crystals has been determined from the values of the Hall constants and the free carrier concentration of the Sb 2−x Tl x Te 3 has been calculated from the plasma resonance frequency; with increasing value of x , the hole concentration decreases. As the incorporation of the elements In, Tl and S into the lattice Sb 2 Te 3 or Bi 2 Te 3 , respectively, gives rise to the uncharged defects In x Sb , Tl x Sb , In x Bi and S x Te , the x causes the decrease of the antisite defects concentration. The proven effect is explained in the following way: the antisite defects can be created only in crystals whose atoms are bound by weakly polarized bonds. The incorporation of In, Tl and S atoms into the crystal lattice of Sb 2 Te 3 or Bi 2 Te 3 increases the bond polarity, the ionicity of ternary crystals increases. This unfavorably affects the increase of antisite defects whose concentration decreases. The change of the bond polarity is considered from the changes discovered in the formation energy of antisite defects of the above mentioned ternary crystals.-
详细资料
- 文献种类:期刊
- 期刊名称: Journal of Physics and Chemistry of Solids
- 期刊缩写: Journal of Physics and Chemistry of Solids
- 期卷页: 1986年 第47卷 第8期 805-809页
- ISBN: 0022-3697
附 件
Energy formation of antisite defects in doped Sb2Te3 and Bi2Te3 crystals
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