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有附件Universal Segregation Growth Approach to Wafer-Size Graphene from Non-Noble Metals

colorstone 添加于 2012-4-1 11:38 | 1326 次阅读 | 0 个评论
  •  作 者

    Liu N, Fu L, Dai B, Yan K, Liu X, Zhao R, Zhang Y, Liu Z
  •  摘 要

    Abstract Image

    Graphene has been attracting wide interests owing to its excellent electronic, thermal, and mechanical performances. Despite the availability of several production techniques, it is still a great challenge to achieve wafer-size graphene with acceptable uniformity and low cost, which would determine the future of graphene electronics. Here we report a universal segregation growth technique for batch production of high-quality wafer-scale graphene from non-noble metal films. Without any extraneous carbon sources, 4 in. graphene wafers have been obtained from Ni, Co, Cu−Ni alloy, and so forth via thermal annealing with over 82% being 1−3 layers and excellent reproducibility. We demonstrate the first example of monolayer and bilayer graphene wafers using Cu−Ni alloy by combining the distinct segregation behaviors of Cu and Ni. Together with the easy detachment from growth substrates, we believe this facile segregation technique will offer a great driving force for graphene research.

    Keywords:

    Graphene; segregation; batch production; wafer-scale; non-noble metal films
  •  详细资料

    • 文献种类:期刊
    • 期刊名称: Nano Letters
    • 期刊缩写: Nano Lett.
    • 期卷页: 2011  11 1 297-303
    • ISBN: 1530-6984
  • 相关链接 DOI URL 

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