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Four-dimensional address topology for circuits with stacked multilayer crossbar arrays

热3 shizhao 添加于 2010-4-8 11:27 | 1732 次阅读 | 0 个评论

作者
Strukov DB, Williams RS
摘要
We present a topological framework that provides a simple yet powerful electronic circuit architecture for constructing and using multilayer crossbar arrays, allowing a significantly increased integration density of memristive crosspoint devices beyond the scaling limits of lateral feature sizes. The truly remarkable feature of such circuits, which is an extension of the CMOL (Cmos + MOLecular-scale devices) concept for an area-like interface to a three-dimensional system, is that a large-feature-size complimentary metal-oxide-semiconductor (CMOS) substrate can provide high-density interconnects to multiple crossbar layers through a single set of vertical vias. The physical locations of the memristive devices are mapped to a four-dimensional logical address space such that unique access from the CMOS substrate is provided to every device in a stacked array of crossbars. This hybrid architecture is compatible with digital memories, field-programmable gate arrays, and biologically inspired adaptive networks and with state-of-the-art integrated circuit foundries.
详细资料
- 文献种类:期刊
- 期刊名称: Proceedings of the National Academy of Sciences
- 期刊缩写: Proceedings of the National Academy of Sciences
- 期卷页: 2009年第106卷第48期 20155-20158页
- ISBN: 0027-8424
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忆阻器 HP
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Four-dimensional address topology for circuits with stacked multilayer crossbar arrays
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