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Photoluminescence in platinum doped GaN

colorstone 添加于 2012-3-9 12:59 | 1059 次阅读 | 0 个评论

作者
Stötzler A, Deicher M
摘要
An epitaxial GaN layer was doped with the radioactive isotope 191 Pt by ion implantation at the online mass separator facility ISOLDE at CERN (energy 60 keV, maximum dose of 3×10 12 ions/cm 2 ). The isotope 191 Pt decays with a half-life of 2.9 d into stable 191 Ir. After annealing at 1300 K several Pt-related photoluminescence transitions in the near-infrared region are detected. Platinum is found to produce near-infrared luminescence consisting of two single transitions (Pt 1 ) at 1.461 and 1.446 eV followed by a set of transitions (Pt 2 ) starting at 1.273 eV each separated by 15 meV in energy. The photoluminescence spectra recorded within 30 days after implantation will be presented. The half-lives resulting from exponential fits to the intensities of these optical transitions yield half-lives of t 1/2 (Pt 1 )=(2.6±0.6) d and t 1/2 (Pt 2 )=(3.1±0.3) d, respectively, in very good agreement with the nuclear half-life of the isotope 191 Pt. Therefore, the recombination centers responsible for this near-infrared luminescence have to involve exactly one Pt atom. We do not observe any other changes in the whole spectral region between 0.9 up to 3.5 eV, in particular no new lines turn up, so we conclude that iridium does not introduce any optically active recombination centers in GaN.
详细资料
- 文献种类: Journal Article
- 期刊名称: Physica B: Condensed Matter
- 期刊缩写: Physica B: Condensed Matter
- 期卷页: 2003年第340-342卷 377-380页
- ISBN: 0921-4526
学科领域工程技术 » 材料科学
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