Direct Growth of Bilayer Graphene on SiO[sub:2]Substrates by Carbon Diffusion through Nickel

 作 者

 摘 要

Here we report a transfer-free method of synthesizing bilayer graphene directly on SiO₂ substrates by carbon diffusion through a layer of nickel. The 400 nm nickel layer was deposited on the top of SiO₂ substrates and used as the catalyst. Spin-coated polymer films such as poly(methyl methacrylate), high-impact polystyrene or acrylonitrile–butadiene–styrene, or gas-phase methane were used as carbon sources. During the annealing process at 1000 °C, the carbon sources on the top of the nickel decomposed and diffused into the nickel layer. When cooled to room temperature, bilayer graphene was formed between the nickel layer and the SiO₂ substrates. The nickel films were removed by etchants, and bilayer graphene was then directly obtained on SiO₂, eliminating any transfer process. The bilayer nature of the obtained graphene films on SiO₂ substrates was verified by Raman spectroscopy and transmission electron microscopy. The Raman spectroscopy mapping over a 100 × 100 μm² area indicated that the obtained graphene is high-quality and bilayer coverage is approximately 70%.

 详细资料

• 文献种类: Journal Article
• 期刊名称: ACS Nano
• 期刊缩写: ACS Nano
• 期卷页: 2011年  第5卷 第10期 8241-8247页
• ISBN: 1936-0851

学科领域 工程技术 » 材料科学

相关链接 DOI URL