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Atomic control of strain in freestanding graphene

colorstone 添加于 2012-5-22 15:16 | 1201 次阅读 | 0 个评论

作者
Xu P, Yang Y, Barber S, Ackerman M, Schoelz J, Qi D, Kornev I, Dong L, Bellaiche L, Barraza-Lopez S, Thibado P
摘要
In this study, we describe an experimental approach based on constant-current scanning tunneling spectroscopy to controllably and reversibly pull freestanding graphene membranes up to 35 nm from their equilibrium height. In addition, we present scanning tunneling microscopy (STM) images of freestanding graphene membranes with atomic resolution. Atomic-scale corrugation amplitudes 20 times larger than the STM electronic corrugation for graphene on a substrate were observed. The freestanding graphene membrane responds to a local attractive force created at the STM tip as a highly conductive yet flexible grounding plane with an elastic restoring force. We indicate possible applications of our method in the controlled creation of pseudomagnetic fields by strain on single-layer graphene.
详细资料
- 文献种类: Journal Article
- 期刊名称: Physical Review B
- 期刊缩写: Phys. Rev. B
- 期卷页: 2012年第85卷第12期
- ISBN: 1098-0121
学科领域工程技术 » 材料科学
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