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Temperature dependence of the low-temperature mobility in ultrapure AlxGa1-xAs/GaAs heterojunctions: Acoustic-phonon scattering

colorstone 添加于 2012-6-8 08:21 | 1206 次阅读 | 0 个评论

作者
Kawamura T, Das Sarma S
摘要
The temperature dependence of the electron mobility in a high-mobility Al_xGa_1-xAs/GaAs heterojunction is theoretically investigated in the temperature range 4–40 K and in the electron-density range (0.3–6)×10¹¹ cm^-2 by considering acoustic-phonon scattering. In agreement with recent experimental results, we find that the linear coefficient of the temperature dependence has a shallow minimum as a function of electron density. Our theoretical results support the claim of an enhanced value for the deformation-potential coupling in these systems, but not for the piezoelectric coupling.
详细资料
- 文献种类: Journal Article
- 期刊名称: Physical Review B
- 期刊缩写: Phys. Rev. B
- 期卷页: 1990年第42卷第6期 3725-3728页
- ISBN: 0163-1829
学科领域工程技术 » 材料科学
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